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FDS8984

FDS8984 onsemi

FDS8984-D.PDF
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 7A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.41 EUR
5000+0.39 EUR
12500+0.38 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDS8984 onsemi

Description: MOSFET 2N-CH 30V 7A 8SOIC, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 7A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.6W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

Weitere Produktangebote FDS8984 nach Preis ab 0.4 EUR bis 1.37 EUR

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FDS8984 FDS8984 Hersteller : onsemi / Fairchild FDS8984-D.PDF MOSFETs 30V N-Channel PowerTrench MOSFET
auf Bestellung 42386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.33 EUR
10+0.95 EUR
100+0.65 EUR
500+0.52 EUR
1000+0.47 EUR
2500+0.4 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDS8984 FDS8984 Hersteller : onsemi FDS8984-D.PDF Description: MOSFET 2N-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 41836 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
19+0.97 EUR
100+0.66 EUR
500+0.53 EUR
1000+0.48 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH