FDS9958-F085 ON Semiconductor / Fairchild

Description: MOSFET 2P-CH 60V 2.9A 8SOIC, Qualification: AEC-Q101, Grade: Automotive, Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, Rds On (Max) @ Id, Vgs: 105mOhm @ 2.9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 2.9A, Drain to Source Voltage (Vdss): 60V, Power - Max: 900mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).