FDT461N Fairchild Semiconductor

Description: MOSFET N-CH 100V 540MA SOT223-4, Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-223-4, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.13W (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 540mA, 10V, Current - Continuous Drain (Id) @ 25°C: 540mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Bulk.