FDT86246 ON Semiconductor
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.68 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDT86246 ON Semiconductor
Description: MOSFET N-CH 150V 2A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V, Power Dissipation (Max): 2.2W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V.
Weitere Produktangebote FDT86246 nach Preis ab 0.52 EUR bis 2.34 EUR
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FDT86246 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 150V 2A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDT86246 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 2A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDT86246 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 2A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 1510 Stücke: Lieferzeit 14-21 Tag (e) |
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FDT86246 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 2A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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FDT86246 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 2A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V |
auf Bestellung 5672 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT86246 | Hersteller : onsemi / Fairchild |
MOSFETs 150V N-Channel PowerTrench MOSFET |
auf Bestellung 15802 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDT86246 | Hersteller : FAIRCHILD |
Trans MOSFET N-CH 150V 2A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDT86246 | Hersteller : FAIRCHILD |
Trans MOSFET N-CH 150V 2A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 3194 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDT86246 | Hersteller : Fairchild |
Trans MOSFET N-CH 150V 2A 4-Pin(3+Tab) SOT-223 FDT86246 TFDT86246 Anzahl je Verpackung: 100 Stücke |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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FDT86246 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 2A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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FDT86246 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 2A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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FDT86246 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 2A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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| FDT86246 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2A; Idm: 8A; 2.2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2.2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 236mΩ Mounting: SMD Gate charge: 2.9nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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FDT86246 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 2A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V |
Produkt ist nicht verfügbar |
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| FDT86246 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2A; Idm: 8A; 2.2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2.2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 236mΩ Mounting: SMD Gate charge: 2.9nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |