FDT86246 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 150V 2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V
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Technische Details FDT86246 onsemi
Description: MOSFET N-CH 150V 2A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V, Power Dissipation (Max): 2.2W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V.
Weitere Produktangebote FDT86246 nach Preis ab 0.84 EUR bis 3.58 EUR
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FDT86246 | Fairchild |
Trans MOSFET N-CH 150V 2A 4-Pin(3+Tab) SOT-223 FDT86246 TFDT86246Anzahl je Verpackung: 100 Stücke |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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FDT86246 | onsemi / Fairchild |
MOSFETs 150V N-Channel PowerTrench MOSFET |
auf Bestellung 13716 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT86246 | onsemi |
Description: MOSFET N-CH 150V 2A SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V |
auf Bestellung 4606 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT86246 | onsemi |
MOSFETs 150V N-Channel PowerTrench MOSFET |
auf Bestellung 9969 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDT86246 |
![]() |
Hersteller: Fairchild
Trans MOSFET N-CH 150V 2A 4-Pin(3+Tab) SOT-223 FDT86246 TFDT86246
Anzahl je Verpackung: 100 Stücke
Trans MOSFET N-CH 150V 2A 4-Pin(3+Tab) SOT-223 FDT86246 TFDT86246
Anzahl je Verpackung: 100 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 1.69 EUR |
| FDT86246 |
![]() |
Hersteller: onsemi / Fairchild
MOSFETs 150V N-Channel PowerTrench MOSFET
MOSFETs 150V N-Channel PowerTrench MOSFET
auf Bestellung 13716 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.09 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.94 EUR |
| 4000+ | 0.84 EUR |
| FDT86246 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 150V 2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V
Description: MOSFET N-CH 150V 2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V
auf Bestellung 4606 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.53 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.09 EUR |
| 2000+ | 1.04 EUR |
| FDT86246 |
![]() |
Hersteller: onsemi
MOSFETs 150V N-Channel PowerTrench MOSFET
MOSFETs 150V N-Channel PowerTrench MOSFET
auf Bestellung 9969 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.58 EUR |
| 10+ | 2.23 EUR |
| 100+ | 1.49 EUR |


