FDU6644 Fairchild Semiconductor

Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 3087 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-251 (IPAK), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 67A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Bulk.