FDV302P_D87Z onsemi
Hersteller: onsemi
Description: MOSFET P-CH 25V 120MA SOT23
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.31 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): -8V
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Technische Details FDV302P_D87Z onsemi
Description: MOSFET P-CH 25V 120MA SOT23, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Part Status: Obsolete, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 350mW (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 120mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.31 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): -8V.
Weitere Produktangebote FDV302P_D87Z
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
FDV302P_D87Z | onsemi / Fairchild |
MOSFET Digital FET P-Ch |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDV302P_D87Z |
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Hersteller: onsemi / Fairchild
MOSFET Digital FET P-Ch
MOSFET Digital FET P-Ch
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


