FDWS9420-F085 ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - FDWS9420-F085 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details FDWS9420-F085 ONSEMI
Description: MOSFET 2N-CH 40V 20A 8PQFN, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V, Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 75W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDWS9420-F085
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| FDWS9420-F085 | onsemi |
Description: MOSFET 2N-CH 40V 20A 8PQFN Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 75W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
FDWS9420-F085 | onsemi / Fairchild |
MOSFET N-Channel PowerTrench MOSFET 40V, 20A, 5.8mO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDWS9420-F085 |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 20A 8PQFN
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 75W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 20A 8PQFN
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 75W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDWS9420-F085 |
|
Hersteller: onsemi / Fairchild
MOSFET N-Channel PowerTrench MOSFET 40V, 20A, 5.8mO
MOSFET N-Channel PowerTrench MOSFET 40V, 20A, 5.8mO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH