Produkte > ONSEMI > FDY100PZ
FDY100PZ

FDY100PZ onsemi

fdy100pz-d.pdf
Hersteller: onsemi
Description: MOSFET P-CH 20V 350MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.24 EUR
6000+0.22 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FDY100PZ onsemi

Description: MOSFET P-CH 20V 350MA SC89-3, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Last Time Buy, Supplier Device Package: SC-89-3, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 625mW (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-89, SOT-490, Packaging: Tape & Reel (TR).

Weitere Produktangebote FDY100PZ nach Preis ab 0.25 EUR bis 0.67 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FDY100PZ FDY100PZ onsemi fdy100pz-d.pdf Description: MOSFET P-CH 20V 350MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
auf Bestellung 13462 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
31+0.57 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.25 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDY100PZ FDY100PZ onsemi / Fairchild FDY100PZ_D-2313288.pdf MOSFET -20VSgl P-Ch -2.5V Spec PwrTrch MOSFET
auf Bestellung 50932 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FDY100PZ fdy100pz-d.pdf
FDY100PZ
Hersteller: onsemi
Description: MOSFET P-CH 20V 350MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
auf Bestellung 13462 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
27+0.67 EUR
31+0.57 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.25 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDY100PZ FDY100PZ_D-2313288.pdf
FDY100PZ
Hersteller: onsemi / Fairchild
MOSFET -20VSgl P-Ch -2.5V Spec PwrTrch MOSFET
auf Bestellung 50932 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH