FDY2001PZ Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET 2P-CH 20V 0.15A SOT563F
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 446mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 150mA
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-563F
auf Bestellung 161335 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4438+ | 0.11 EUR |
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Technische Details FDY2001PZ Fairchild Semiconductor
Description: MOSFET 2P-CH 20V 0.15A SOT563F, Packaging: Bulk, Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 446mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 150mA, Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V, Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-563F.
Weitere Produktangebote FDY2001PZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FDY2001PZ | Hersteller : ONSEMI |
Description: ONSEMI - FDY2001PZ - MOSFET, DUAL, P, SMD, SC89 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: Unknown hazardous: false rohsPhthalatesCompliant: TBA usEccn: Unknown |
auf Bestellung 161335 Stücke: Lieferzeit 14-21 Tag (e) |