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FDY3000NZ

FDY3000NZ onsemi

fdy3000nz-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 600MA SOT563F
Supplier Device Package: SOT-563F
Vgs(th) (Max) @ Id: 1.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 600mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 446mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 1499 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
32+0.55 EUR
100+0.38 EUR
500+0.3 EUR
1000+0.24 EUR
Mindestbestellmenge: 28
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Technische Details FDY3000NZ onsemi

Description: MOSFET 2N-CH 20V 600MA SOT563F, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 446mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 600mA, Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V, Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-563F.

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FDY3000NZ FDY3000NZ Hersteller : onsemi / Fairchild FDY3000NZ_D-2313326.pdf MOSFET 20V Dual N-Chl 2.5V Spec PwrTrch MOSFET
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH