FDZ294N Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 20V 6A 9BGA
Packaging: Bulk
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 9-BGA (1.5x1.6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
auf Bestellung 53580 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 290+ | 1.83 EUR |
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Technische Details FDZ294N Fairchild Semiconductor
Description: MOSFET N-CH 20V 6A 9BGA, Packaging: Bulk, Package / Case: 9-VFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 4.5V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 9-BGA (1.5x1.6), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V.
Weitere Produktangebote FDZ294N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| FDZ294N | Hersteller : FAIRCHILD |
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auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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FDZ294N | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 6A 9-Pin BGA T/R |
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