FDZ451PZ ON Semiconductor / Fairchild
auf Bestellung 4365 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details FDZ451PZ ON Semiconductor / Fairchild
Description: SMALL SIGNAL FIELD-EFFECT TRANSI, Packaging: Bulk, Package / Case: 4-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 4-WLCSP (0.8x0.8), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V.
Weitere Produktangebote FDZ451PZ nach Preis ab 0.1 EUR bis 0.1 EUR
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| FDZ451PZ | Hersteller : Fairchild Semiconductor |
 Description: SMALL SIGNAL FIELD-EFFECT TRANSIPackaging: Bulk Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 4-WLCSP (0.8x0.8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V |
auf Bestellung 9571 Stücke: Lieferzeit 10-14 Tag (e) |
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