Technische Details FES8DT/45 VIS
Description: DIODE GEN PURP 200V 8A TO220AC, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 8A.
Weitere Produktangebote FES8DT/45
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FES8DT/45 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 8A TO220AC Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A |
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