FESB16CT-E3/81 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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Technische Details FESB16CT-E3/81 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB, Current - Reverse Leakage @ Vr: 10 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A, Voltage - DC Reverse (Vr) (Max): 150 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 16A, Capacitance @ Vr, F: 175pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote FESB16CT-E3/81
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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FESB16CT-E3/81 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 16A TO263AB Current - Reverse Leakage @ Vr: 10 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 16A Capacitance @ Vr, F: 175pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
FESB16CT-E3/81 | Vishay General Semiconductor |
Rectifiers 150 Volt 16 Amp 35ns Single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FESB16CT-E3/81 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 16A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 150V 16A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FESB16CT-E3/81 |
|
Hersteller: Vishay General Semiconductor
Rectifiers 150 Volt 16 Amp 35ns Single
Rectifiers 150 Volt 16 Amp 35ns Single
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH