FESF8DT-E3/45 Vishay General Semiconductor
auf Bestellung 626 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.75 EUR |
| 100+ | 3.57 EUR |
| 500+ | 3.4 EUR |
| 1000+ | 1.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FESF8DT-E3/45 Vishay General Semiconductor
Description: DIODE GEN PURP 200V 8A ITO220AC, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Weitere Produktangebote FESF8DT-E3/45
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
FESF8DT-E3/45 | Hersteller : Vishay Semiconductors |
Rectifiers 200 Volt 8.0A 35ns Single |
auf Bestellung 996 Stücke: Lieferzeit 10-14 Tag (e) |
|
|
|
FESF8DT-E3/45 | Hersteller : Vishay |
Diode Switching 200V 8A 2-Pin(2+Tab) ITO-220AC Tube |
Produkt ist nicht verfügbar |
|
|
FESF8DT-E3/45 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 8A ITO220ACPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |

