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FF1000R17IE4PBOSA1

FF1000R17IE4PBOSA1 Infineon Technologies


Infineon-FF1000R17IE4P-DS-v03_02-EN.pdf?fileId=5546d46253a864fe0153e62757277813 Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+1238.9 EUR
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Technische Details FF1000R17IE4PBOSA1 Infineon Technologies

Description: IGBT MODULE 1700V 1000A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 1000 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1000000 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 81 nF @ 25 V.

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