Technische Details FF1400R12IP4B60BOSA1 Infineon Technologies
Description: PP IHM I, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA, NTC Thermistor: Yes, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 1400 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 7650 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V.
Weitere Produktangebote FF1400R12IP4B60BOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| FF1400R12IP4B60BOSA1 | Hersteller : Infineon Technologies |
Description: PP IHM I Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1400 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 7650 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FF1400R12IP4B60BOSA1 | Hersteller : Infineon Technologies |
 IGBT Modules PP IHM I |
Produkt ist nicht verfügbar |