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FF150R12KE3GB2HOSA1 Infineon Technologies


FF150R12KE3G.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 225A 780W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+166.95 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FF150R12KE3GB2HOSA1 Infineon Technologies

Description: IGBT MOD 1200V 225A 780W MOD, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 225 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 780 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 11 nF @ 25 V.

Weitere Produktangebote FF150R12KE3GB2HOSA1 nach Preis ab 148.13 EUR bis 188 EUR

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FF150R12KE3GB2HOSA1 FF150R12KE3GB2HOSA1 Infineon Technologies FF150R12KE3G.pdf Description: IGBT MOD 1200V 225A 780W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
1+188 EUR
10+148.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF150R12KE3GB2HOSA1 FF150R12KE3G.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 225A 780W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+188 EUR
10+148.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH