Technische Details FF150R12KT3GHOSA1 Infineon Technologies
Description: INFINEON - FF150R12KT3GHOSA1 - IGBT-Modul, Zweifach, 225 A, 1.7 V, 780 W, 125 °C, Module, IGBT-Technologie: IGBT 3 [Trench/Feldstop], Sperrschichttemperatur Tj, max.: 125, Kollektor-Emitter-Sättigungsspannung: 1.7, Dauer-Kollektorstrom: 225, IGBT-Anschluss: Lötfahne, Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7, Verlustleistung Pd: 780, Verlustleistung: 780, Bauform - Transistor: Module, Kollektor-Emitter-Spannung V(br)ceo: 1.2, Produktpalette: 62mm C, Kollektor-Emitter-Spannung, max.: 1.2, IGBT-Konfiguration: Zweifach, Wandlerpolarität: n-Kanal, DC-Kollektorstrom: 225, Betriebstemperatur, max.: 125, SVHC: No SVHC (08-Jul-2021).
Weitere Produktangebote FF150R12KT3GHOSA1 nach Preis ab 66.83 EUR bis 203.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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FF150R12KT3GHOSA1 | Infineon Technologies |
 Trans IGBT Module N-CH 1200V 225A 780W 7-Pin 62MM-1 Tray |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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FF150R12KT3GHOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 225A 780W MOD Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 225 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 780 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 11 nF @ 25 V |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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FF150R12KT3GHOSA1 | Infineon Technologies |
Trans IGBT Module N-CH 1200V 225A 780W 7-Pin 62MM-1 Tray |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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FF150R12KT3GHOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 225A 780W MOD Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 225 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 780 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 11 nF @ 25 V |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FF150R12KT3GHOSA1 |
|
Hersteller: Infineon Technologies
Trans IGBT Module N-CH 1200V 225A 780W 7-Pin 62MM-1 Tray
Trans IGBT Module N-CH 1200V 225A 780W 7-Pin 62MM-1 Tray
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 142.3 EUR |
| 3+ | 66.83 EUR |
| FF150R12KT3GHOSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 225A 780W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Description: IGBT MOD 1200V 225A 780W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 185.88 EUR |
| FF150R12KT3GHOSA1 |
|
Hersteller: Infineon Technologies
Trans IGBT Module N-CH 1200V 225A 780W 7-Pin 62MM-1 Tray
Trans IGBT Module N-CH 1200V 225A 780W 7-Pin 62MM-1 Tray
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 195.43 EUR |
| FF150R12KT3GHOSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 225A 780W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Description: IGBT MOD 1200V 225A 780W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 203.25 EUR |