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FF150R12MS4GBOSA1

FF150R12MS4GBOSA1 Infineon Technologies

Infineon-FF150R12MS4G-DS-v02_01-en_de.pdf?fileId=db3a30431375fb1a011378cb1e0b00bb
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 225A 1250W MOD
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 225 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details FF150R12MS4GBOSA1 Infineon Technologies

Description: IGBT MOD 1200V 225A 1250W MOD, Input Capacitance (Cies) @ Vce: 11 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 1250 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 225 A, Part Status: Active, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A, Operating Temperature: -40°C ~ 125°C, Configuration: 2 Independent, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.