FF17MR12W1M1HB70BPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Discrete Semiconductor Modules Half-bridge 1200 V module with CoolSiC MOSFET
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Technische Details FF17MR12W1M1HB70BPSA1 Infineon Technologies
Description: MOSFET 1200V AG-EASY1B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Supplier Device Package: AG-EASY1B, Part Status: Active.
Weitere Produktangebote FF17MR12W1M1HB70BPSA1 nach Preis ab 97.97 EUR bis 129.66 EUR
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FF17MR12W1M1HB70BPSA1 | Infineon Technologies |
Description: MOSFET 1200V AG-EASY1B Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Supplier Device Package: AG-EASY1B Part Status: Active |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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| FF17MR12W1M1HB70BPSA1 | INFINEON TECHNOLOGIES |
Category: Transistor modules MOSFET Description: Module; 1.2kV; 50A; AG-EASY1B; SiC Drain-source voltage: 1.2kV Drain current: 50A On-state resistance: 16.2mΩ Technology: SiC Type of semiconductor module: MOSFET transistor Case: AG-EASY1B |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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| FF17MR12W1M1HB70BPSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: AG-EASY1B
Part Status: Active
Description: MOSFET 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: AG-EASY1B
Part Status: Active
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 129.66 EUR |
| 24+ | 97.97 EUR |
| FF17MR12W1M1HB70BPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; 1.2kV; 50A; AG-EASY1B; SiC
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 16.2mΩ
Technology: SiC
Type of semiconductor module: MOSFET transistor
Case: AG-EASY1B
Category: Transistor modules MOSFET
Description: Module; 1.2kV; 50A; AG-EASY1B; SiC
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 16.2mΩ
Technology: SiC
Type of semiconductor module: MOSFET transistor
Case: AG-EASY1B
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 99.26 EUR |