Produkte > INFINEON TECHNOLOGIES > FF225R12ME3BOSA1

FF225R12ME3BOSA1 Infineon Technologies



Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 325A 1150W
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1150 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 325 A
Part Status: Not For New Designs
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 605 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+210.04 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FF225R12ME3BOSA1 Infineon Technologies

Description: IGBT MOD 1200V 325A 1150W, Input Capacitance (Cies) @ Vce: 16 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 1150 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 325 A, Part Status: Not For New Designs, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A, Operating Temperature: -40°C ~ 125°C, Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.

Weitere Produktangebote FF225R12ME3BOSA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
FF225R12ME3BOSA1 Infineon Technologies Description: IGBT MOD 1200V 325A 1150W
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1150 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 325 A
Part Status: Not For New Designs
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FF225R12ME3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 325A 1150W
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1150 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 325 A
Part Status: Not For New Designs
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH