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FF225R12ME4BOSA1

FF225R12ME4BOSA1 Infineon Technologies

Infineon-FF225R12ME4-DS-v03_02-en_de.pdf?fileId=db3a30431a5c32f2011a768d9f6e6c3e
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 320A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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Technische Details FF225R12ME4BOSA1 Infineon Technologies

Description: IGBT MOD 1200V 320A 1050W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 320 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1050 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 13 nF @ 25 V.