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FF225R17ME4PB11BPSA1

FF225R17ME4PB11BPSA1 Infineon Technologies

Infineon-FF225R17ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b10283a015b1ef28594015c
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 450A 20MW
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
Operating Temperature: -40°C ~ 150°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
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AnzahlPreis
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Mindestbestellmenge: 3 Stücke
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Technische Details FF225R17ME4PB11BPSA1 Infineon Technologies

Description: IGBT MOD 1700V 450A 20MW, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A, Operating Temperature: -40°C ~ 150°C, Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V, Current - Collector Cutoff (Max): 3 mA, Power - Max: 20 mW, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector (Ic) (Max): 450 A, Part Status: Active.

Weitere Produktangebote FF225R17ME4PB11BPSA1

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FF225R17ME4PB11BPSA1 FF225R17ME4PB11BPSA1 Infineon Technologies Infineon-FF225R17ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b10283a015b1ef28594015c Description: IGBT MOD 1700V 450A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FF225R17ME4PB11BPSA1 FF225R17ME4PB11BPSA1 Infineon Technologies Infineon_FF225R17ME4P_B11_DataSheet_v01_10_CN-3445983.pdf IGBT Modules 1700 V, 225 A dual IGBT module
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF225R17ME4PB11BPSA1 Infineon-FF225R17ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b10283a015b1ef28594015c
FF225R17ME4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 450A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FF225R17ME4PB11BPSA1 Infineon_FF225R17ME4P_B11_DataSheet_v01_10_CN-3445983.pdf
FF225R17ME4PB11BPSA1
Hersteller: Infineon Technologies
IGBT Modules 1700 V, 225 A dual IGBT module
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH