Produkte > INFINEON TECHNOLOGIES > FF23MR12W1M1PB11BPSA1

FF23MR12W1M1PB11BPSA1 Infineon Technologies


Infineon-FF23MR12W1M1P_B11-DS-v02_00-EN-1568266.pdf
Hersteller: Infineon Technologies
Discrete Semiconductor Modules LOW POWER EASY
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+184.4 EUR
10+172.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FF23MR12W1M1PB11BPSA1 Infineon Technologies

Description: MOSFET 2 IND 1200V 50A EASY1BM, Supplier Device Package: AG-EASY1BM-2, Vgs(th) (Max) @ Id: 5.5V @ 20mA, Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V, Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V, Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 50A, Drain to Source Voltage (Vdss): 1200V (1.2kV), Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 Independent, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.

Weitere Produktangebote FF23MR12W1M1PB11BPSA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
FF23MR12W1M1PB11BPSA1 FF23MR12W1M1PB11BPSA1 Infineon Technologies Infineon-FF23MR12W1M1P_B11-DS-v02_00-EN.pdf?fileId=5546d46268554f4a0168935460515bbc Description: MOSFET 2 IND 1200V 50A EASY1BM
Supplier Device Package: AG-EASY1BM-2
Vgs(th) (Max) @ Id: 5.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 50A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 Independent
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF23MR12W1M1PB11BPSA1 Infineon-FF23MR12W1M1P_B11-DS-v02_00-EN.pdf?fileId=5546d46268554f4a0168935460515bbc
Hersteller: Infineon Technologies
Description: MOSFET 2 IND 1200V 50A EASY1BM
Supplier Device Package: AG-EASY1BM-2
Vgs(th) (Max) @ Id: 5.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 50A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 Independent
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH