FF2MR12KM1HOSA1 Infineon Technologies
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1020.24 EUR |
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Technische Details FF2MR12KM1HOSA1 Infineon Technologies
Description: SIC 2N-CH 1200V 500A AG-62MM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 500A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V, Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V, Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V, Vgs(th) (Max) @ Id: 5.15V @ 224mA, Supplier Device Package: AG-62MM, Part Status: Obsolete.
Weitere Produktangebote FF2MR12KM1HOSA1 nach Preis ab 1058.03 EUR bis 2019.67 EUR
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FF2MR12KM1HOSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH SiC 1.2KV 500A Tray |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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FF2MR12KM1HOSA1 | Hersteller : Infineon Technologies |
Description: SIC 2N-CH 1200V 500A AG-62MM Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V Vgs(th) (Max) @ Id: 5.15V @ 224mA Supplier Device Package: AG-62MM Part Status: Obsolete |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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FF2MR12KM1HOSA1 | Hersteller : Infineon Technologies |
Discrete Semiconductor Modules MEDIUM POWER 62MM |
auf Bestellung 42 Stücke: Lieferzeit 10-14 Tag (e) |
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FF2MR12KM1HOSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH SiC 1.2KV 500A |
Produkt ist nicht verfügbar |