Technische Details FF2MR12KM1PHOSA1 Infineon Technologies
Description: SIC 2N-CH 1200V 500A AG-62MM, Supplier Device Package: AG-62MM, Vgs(th) (Max) @ Id: 5.15V @ 224mA, Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V, Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V, Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 500A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Weitere Produktangebote FF2MR12KM1PHOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
FF2MR12KM1PHOSA1 | Infineon Technologies |
 Description: SIC 2N-CH 1200V 500A AG-62MMSupplier Device Package: AG-62MM Vgs(th) (Max) @ Id: 5.15V @ 224mA Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FF2MR12KM1PHOSA1 |
|
Hersteller: Infineon Technologies
Description: SIC 2N-CH 1200V 500A AG-62MM
Supplier Device Package: AG-62MM
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: SIC 2N-CH 1200V 500A AG-62MM
Supplier Device Package: AG-62MM
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH