FF300R12MS4BOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 1200V 370A 1950W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 320.36 EUR |
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Technische Details FF300R12MS4BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 370A 1950W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 370 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1950 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 20 nF @ 25 V.
Weitere Produktangebote FF300R12MS4BOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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FF300R12MS4BOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 370A 1950000mW 11-Pin ECONOD-3 Tray |
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