FF300R17ME4 Infineon Technologies

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Type of semiconductor module: IGBT, Collector current: 300A, Topology: IGBT half-bridge; NTC thermistor, Power dissipation: 1.8kW, Technology: EconoDUAL™ 3, Mechanical mounting: screw, Pulsed collector current: 600A, Max. off-state voltage: 1.7kV, Electrical mounting: Press-in PCB, Semiconductor structure: transistor/transistor, Case: AG-ECONOD-3, Gate-emitter voltage: ±20V.