FF300R17ME4BOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 1700V 375A 1800W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1800 W
Current - Collector Cutoff (Max): 3 mA
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 210.81 EUR |
| 10+ | 185.32 EUR |
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Technische Details FF300R17ME4BOSA1 Infineon Technologies
Description: IGBT MOD 1700V 375A 1800W MOD, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: NPT, Part Status: Active, Current - Collector (Ic) (Max): 375 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1800 W, Current - Collector Cutoff (Max): 3 mA.
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FF300R17ME4BOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1700V 375A 1800000mW 11-Pin ECONOD-3 Tray |
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| FF300R17ME4BOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Technology: EconoDUAL™ 3 Type of semiconductor module: IGBT Topology: IGBT half-bridge; NTC thermistor Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.8kW Case: AG-ECONOD-3 |
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