FF300R17ME4BOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 1700V 375A 1800W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1800 W
Current - Collector Cutoff (Max): 3 mA
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 220.26 EUR |
| 10+ | 212.43 EUR |
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Technische Details FF300R17ME4BOSA1 Infineon Technologies
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 600A, Power dissipation: 1.8kW, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: EconoDUAL™ 3, Topology: IGBT half-bridge; NTC thermistor, Type of semiconductor module: IGBT, Case: AG-ECONOD-3, Max. off-state voltage: 1.7kV, Semiconductor structure: transistor/transistor, Anzahl je Verpackung: 1 Stücke.
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FF300R17ME4BOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1700V 375A 1800000mW 11-Pin ECONOD-3 Tray |
Produkt ist nicht verfügbar |
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| FF300R17ME4BOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.8kW Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Case: AG-ECONOD-3 Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| FF300R17ME4BOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.8kW Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Case: AG-ECONOD-3 Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |