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FF400R12KE3B2HOSA1

FF400R12KE3B2HOSA1 Infineon Technologies

Infineon-FF400R12KE3_B2-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161f5b4b131ef1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2000 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 580 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details FF400R12KE3B2HOSA1 Infineon Technologies

Description: IGBT MOD 1200V 580A 2000W, Input Capacitance (Cies) @ Vce: 28 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 2000 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 580 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A, Operating Temperature: -40°C ~ 125°C, Configuration: 2 Independent, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.