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FF450R17ME4PBOSA1

FF450R17ME4PBOSA1 Infineon Technologies


infineon-ff450r17me4p-ds-v03_00-en.pdf Hersteller: Infineon Technologies
High Reliability IGBT Modules IC
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Technische Details FF450R17ME4PBOSA1 Infineon Technologies

Description: IGBT MOD 1700V 900A 20MW, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 900 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 36 nF @ 25 V.

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FF450R17ME4PBOSA1 FF450R17ME4PBOSA1 Hersteller : Infineon Technologies Infineon-FF450R17ME4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b3e41ca75068e Description: IGBT MOD 1700V 900A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Produkt ist nicht verfügbar
FF450R17ME4PBOSA1 FF450R17ME4PBOSA1 Hersteller : Infineon Technologies Infineon_FF450R17ME4P_DS_v03_00_EN-1731408.pdf IGBT Modules MEDIUM POWER ECONO
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