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FF600R17ME4PB11BOSA1

FF600R17ME4PB11BOSA1 Infineon Technologies


infineon-ff600r17me4p_b11-ds-v03_00-en.pdffileid5546d4625d5945ed0.pdf Hersteller: Infineon Technologies
EconoDUAL3 module with Trench/Field stop IGBT4 and Emitter Controlled diode and PressFIT / NTC / TIM
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Lieferzeit 14-21 Tag (e)
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1+200.6 EUR
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Technische Details FF600R17ME4PB11BOSA1 Infineon Technologies

Description: IGBT MODULE VCES 1200V 600A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 600 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 48 nF @ 25 V.

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FF600R17ME4PB11BOSA1 FF600R17ME4PB11BOSA1 Hersteller : Infineon Technologies infineon-ff600r17me4p_b11-ds-v03_00-en.pdffileid5546d4625d5945ed0.pdf EconoDUAL3 module with Trench/Field stop IGBT4 and Emitter Controlled diode and PressFIT / NTC / TIM
Produkt ist nicht verfügbar
FF600R17ME4PB11BOSA1 FF600R17ME4PB11BOSA1 Hersteller : Infineon Technologies infineon-ff600r17me4p_b11-ds-v03_00-en.pdffileid5546d4625d5945ed0.pdf EconoDUAL3 module with Trench/Field stop IGBT4 and Emitter Controlled diode and PressFIT / NTC / TIM
Produkt ist nicht verfügbar
FF600R17ME4PB11BOSA1 FF600R17ME4PB11BOSA1 Hersteller : Infineon Technologies Infineon-FF600R17ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d5fdf582a53b8 Description: IGBT MODULE VCES 1200V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
Produkt ist nicht verfügbar