FF6MR12W2M1B70BPSA1 Infineon Technologies
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 583.69 EUR |
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Technische Details FF6MR12W2M1B70BPSA1 Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 20mW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 200A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V, Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V, Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V, Vgs(th) (Max) @ Id: 5.55V @ 80mA, Supplier Device Package: AG-EASY2B, Part Status: Obsolete.
Weitere Produktangebote FF6MR12W2M1B70BPSA1 nach Preis ab 568.18 EUR bis 585.80 EUR
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| FF6MR12W2M1B70BPSA1 | Hersteller : Infineon Technologies |
 Description: LOW POWER EASY AG-EASY2B-2Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 20mW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V Vgs(th) (Max) @ Id: 5.55V @ 80mA Supplier Device Package: AG-EASY2B Part Status: Obsolete |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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FF6MR12W2M1B70BPSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH SiC 1.2KV 200A 35-Pin AG-EASY2B Tray |
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