FF6MR12W2M1B70BPSA1 Infineon Technologies
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| 1+ | 694.59 EUR |
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Technische Details FF6MR12W2M1B70BPSA1 Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY2B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 200A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V, Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V, Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V, Vgs(th) (Max) @ Id: 5.55V @ 80mA, Supplier Device Package: AG-EASY2B, Part Status: Obsolete.
Weitere Produktangebote FF6MR12W2M1B70BPSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| FF6MR12W2M1B70BPSA1 | Infineon Technologies |
 Description: MOSFET 2N-CH 1200V AG-EASY2BPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V Vgs(th) (Max) @ Id: 5.55V @ 80mA Supplier Device Package: AG-EASY2B Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FF6MR12W2M1B70BPSA1 | Infineon Technologies |
Trans MOSFET N-CH SiC 1.2KV 200A 35-Pin AG-EASY2B Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FF6MR12W2M1B70BPSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Supplier Device Package: AG-EASY2B
Part Status: Obsolete
Description: MOSFET 2N-CH 1200V AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Supplier Device Package: AG-EASY2B
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FF6MR12W2M1B70BPSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 1.2KV 200A 35-Pin AG-EASY2B Tray
Trans MOSFET N-CH SiC 1.2KV 200A 35-Pin AG-EASY2B Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen
Stück im Wert von UAH