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FF6MR12W2M1B70BPSA1 Infineon Technologies


Infineon_FF6MR12W2M1_B70_DataSheet_v02_00_EN-2255790.pdf
Hersteller: Infineon Technologies
Discrete Semiconductor Modules LOW POWER EASY
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Technische Details FF6MR12W2M1B70BPSA1 Infineon Technologies

Description: MOSFET 2N-CH 1200V AG-EASY2B, Part Status: Obsolete, Supplier Device Package: AG-EASY2B, Vgs(th) (Max) @ Id: 5.55V @ 80mA, Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V, Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V, Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 200A (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.

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FF6MR12W2M1B70BPSA1 Infineon Technologies Infineon-FF6MR12W2M1_B70-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc7439017839e7ffac498c Description: MOSFET 2N-CH 1200V AG-EASY2B
Part Status: Obsolete
Supplier Device Package: AG-EASY2B
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF6MR12W2M1B70BPSA1 Infineon-FF6MR12W2M1_B70-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc7439017839e7ffac498c
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY2B
Part Status: Obsolete
Supplier Device Package: AG-EASY2B
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH