FF75R12YT3BOMA1 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - FF75R12YT3BOMA1 - FF75R12 - IGBT MODULE
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
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Lieferzeit 14-21 Tag (e)
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Technische Details FF75R12YT3BOMA1 ROCHESTER ELECTRONICS
Description: IGBT MOD 1200V 100A 345W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 345 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 5 nF @ 25 V.
Weitere Produktangebote FF75R12YT3BOMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FF75R12YT3BOMA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 100A 345000mW Tray |
Produkt ist nicht verfügbar |
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| FF75R12YT3BOMA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 100A 345W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 345 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 5 nF @ 25 V |
Produkt ist nicht verfügbar |