Technische Details FF800R12KE3NOSA1 Infineon Technologies
Description: IGBT MOD 1200V 1200A 3900W MOD, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 800A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 1200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 3900 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 57 nF @ 25 V.
Weitere Produktangebote FF800R12KE3NOSA1 nach Preis ab 1231.52 EUR bis 1316.63 EUR
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FF800R12KE3NOSA1 | Hersteller : Infineon Technologies |
 Trans IGBT Module N-CH 1200V 1.2KA 3900W 10-Pin IHM130-2 Tray |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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FF800R12KE3NOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 1.2KA 3900W 10-Pin IHM130-2 Tray |
auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
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FF800R12KE3NOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 1200A 3900W MOD Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 800A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 1200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3900 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 57 nF @ 25 V |
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