FF800R12KE7EHPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 800A AG-62MMHB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
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Technische Details FF800R12KE7EHPSA1 Infineon Technologies
Description: IGBT MOD 1200V 800A AG-62MMHB, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 800A, NTC Thermistor: No, Supplier Device Package: AG-62MMHB, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 800 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 122 nF @ 25 V.
Weitere Produktangebote FF800R12KE7EHPSA1 nach Preis ab 278.33 EUR bis 329.6 EUR
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FF800R12KE7EHPSA1 | Infineon Technologies |
IGBT Modules 1200 V, 800 A common emitter IGBT module |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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| FF800R12KE7EHPSA1 |
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Hersteller: Infineon Technologies
IGBT Modules 1200 V, 800 A common emitter IGBT module
IGBT Modules 1200 V, 800 A common emitter IGBT module
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 329.6 EUR |
| 10+ | 278.33 EUR |

