FF800R17KE3B2NOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MODULE 1700V 800A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: A-IHV130-3
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 5200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 72 nF @ 25 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1645.27 EUR |
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Technische Details FF800R17KE3B2NOSA1 Infineon Technologies
Description: IGBT MODULE 1700V 800A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A, NTC Thermistor: No, Supplier Device Package: A-IHV130-3, Current - Collector (Ic) (Max): 1200 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 5200 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 72 nF @ 25 V.
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FF800R17KE3B2NOSA1 | Hersteller : Infineon Technologies |
IGBT-modules ,Inverter |
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| FF800R17KE3B2NOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MODULE 1700V 800A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A NTC Thermistor: No Supplier Device Package: A-IHV130-3 Current - Collector (Ic) (Max): 1200 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 5200 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 72 nF @ 25 V |
Produkt ist nicht verfügbar |