FF800R17KP4B2NOSA2 Infineon Technologies

Description: IGBT MODULE 1700V 800A, Input Capacitance (Cies) @ Vce: 65 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 1200 W, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector (Ic) (Max): 1200 A, IGBT Type: Trench Field Stop, Supplier Device Package: A-IHV130-3, NTC Thermistor: No, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 Independent, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.