FFSB0865B-F085 onsemi
Hersteller: onsemi
Description: DIODE SIL CARB 650V 10.1A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Current - Average Rectified (Io): 10.1A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
| Anzahl | Preis |
|---|---|
| 800+ | 3.93 EUR |
| 1600+ | 3.37 EUR |
| 2400+ | 3.17 EUR |
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Technische Details FFSB0865B-F085 onsemi
Description: DIODE SIL CARB 650V 10.1A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 336pF @ 1V, 100kHz, Current - Average Rectified (Io): 10.1A, Supplier Device Package: TO-263 (D2Pak), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote FFSB0865B-F085 nach Preis ab 3.24 EUR bis 8.31 EUR
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FFSB0865B-F085 | onsemi |
Description: DIODE SIL CARB 650V 10.1A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 336pF @ 1V, 100kHz Current - Average Rectified (Io): 10.1A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSB0865B-F085 | onsemi |
SiC Schottky Diodes 650V 8A SIC SBD GEN1.5 |
auf Bestellung 855 Stücke: Lieferzeit 10-14 Tag (e) |
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| FFSB0865B-F085 |
|
Hersteller: onsemi
Description: DIODE SIL CARB 650V 10.1A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Current - Average Rectified (Io): 10.1A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 10.1A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Current - Average Rectified (Io): 10.1A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.51 EUR |
| 10+ | 5.47 EUR |
| 100+ | 4.42 EUR |
| FFSB0865B-F085 |
|
Hersteller: onsemi
SiC Schottky Diodes 650V 8A SIC SBD GEN1.5
SiC Schottky Diodes 650V 8A SIC SBD GEN1.5
auf Bestellung 855 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 8.31 EUR |
| 10+ | 5.53 EUR |
| 100+ | 3.8 EUR |
| 500+ | 3.24 EUR |