| Anzahl | Preis |
|---|---|
| 1+ | 11.04 EUR |
| 10+ | 6.95 EUR |
| 120+ | 5.83 EUR |
| 510+ | 5.77 EUR |
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Technische Details FFSH10120A onsemi
Description: DIODE SIL CARB 1.2KV 17A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 612pF @ 1V, 100kHz, Current - Average Rectified (Io): 17A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote FFSH10120A nach Preis ab 8.1 EUR bis 11.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FFSH10120A | onsemi |
 Description: DIODE SIL CARB 1.2KV 17A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 612pF @ 1V, 100kHz Current - Average Rectified (Io): 17A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
auf Bestellung 445 Stücke: Lieferzeit 10-14 Tag (e) |
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| FFSH10120A | ON Semiconductor |
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auf Bestellung 806 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FFSH10120A |
|
Hersteller: onsemi
Description: DIODE SIL CARB 1.2KV 17A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Current - Average Rectified (Io): 17A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 17A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Current - Average Rectified (Io): 17A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.33 EUR |
| 10+ | 9.72 EUR |
| 100+ | 8.1 EUR |
| FFSH10120A |
|
Hersteller: ON Semiconductor
auf Bestellung 806 Stücke:
Lieferzeit 21-28 Tag (e)