FFSH20120ADN-F155 onsemi / Fairchild
| Anzahl | Preis |
|---|---|
| 1+ | 11.81 EUR |
| 10+ | 10.23 EUR |
| 120+ | 9.98 EUR |
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Technische Details FFSH20120ADN-F155 onsemi / Fairchild
Description: DIODE ARR SIC 1200V 10A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A (DC), Supplier Device Package: TO-247-3, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote FFSH20120ADN-F155 nach Preis ab 10.96 EUR bis 18.62 EUR
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FFSH20120ADN-F155 | onsemi |
 Description: DIODE ARR SIC 1200V 10A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
auf Bestellung 433 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSH20120ADN-F155 | onsemi |
SiC Schottky Diodes 1200V SiC SBD 20A |
auf Bestellung 205 Stücke: Lieferzeit 10-14 Tag (e) |
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| FFSH20120ADN-F155 |
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Hersteller: onsemi
Description: DIODE ARR SIC 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE ARR SIC 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 433 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 17.28 EUR |
| 10+ | 15.24 EUR |
| 100+ | 13.18 EUR |
| FFSH20120ADN-F155 |
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Hersteller: onsemi
SiC Schottky Diodes 1200V SiC SBD 20A
SiC Schottky Diodes 1200V SiC SBD 20A
auf Bestellung 205 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.62 EUR |
| 10+ | 10.96 EUR |