FFSH2065B-F085 ON Semiconductor
Hersteller: ON Semiconductor
Diode Schottky SiC 650V 22.3A 2-Pin(2+Tab) TO-247 Tube Automotive AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 65+ | 10.27 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
65 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FFSH2065B-F085 ON Semiconductor
Description: DIODE SIL CARB 650V 20A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 866pF @ 1V, 100kHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Qualification: AEC-Q101.
Weitere Produktangebote FFSH2065B-F085 nach Preis ab 9.17 EUR bis 19.18 EUR
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FFSH2065B-F085 | ON Semiconductor |
Diode Schottky SiC 650V 22.3A 2-Pin(2+Tab) TO-247 Tube Automotive AEC-Q101 |
auf Bestellung 401 Stücke: Lieferzeit 14-21 Tag (e) |
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FFSH2065B-F085 | onsemi |
SiC Schottky Diodes Auto SiC Schottky Diode, 650 V |
auf Bestellung 1104 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSH2065B-F085 | onsemi |
Description: DIODE SIL CARB 650V 20A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 866pF @ 1V, 100kHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V Qualification: AEC-Q101 |
auf Bestellung 419 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FFSH2065B-F085 |
|
Hersteller: ON Semiconductor
Diode Schottky SiC 650V 22.3A 2-Pin(2+Tab) TO-247 Tube Automotive AEC-Q101
Diode Schottky SiC 650V 22.3A 2-Pin(2+Tab) TO-247 Tube Automotive AEC-Q101
auf Bestellung 401 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 10.27 EUR |
| 100+ | 9.63 EUR |
| FFSH2065B-F085 |
|
Hersteller: onsemi
SiC Schottky Diodes Auto SiC Schottky Diode, 650 V
SiC Schottky Diodes Auto SiC Schottky Diode, 650 V
auf Bestellung 1104 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.62 EUR |
| 10+ | 10.17 EUR |
| 120+ | 9.38 EUR |
| 1020+ | 9.17 EUR |
| FFSH2065B-F085 |
|
Hersteller: onsemi
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 419 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.18 EUR |
| 30+ | 11.32 EUR |
| 60+ | 10.38 EUR |
| 120+ | 9.59 EUR |