FFSH2065BDN onsemi
Hersteller: onsemiDescription: DIODE ARRAY SIC 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 9577 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.65 EUR |
| 10+ | 5.14 EUR |
| 450+ | 3.68 EUR |
| 900+ | 3.13 EUR |
| 1350+ | 2.95 EUR |
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Technische Details FFSH2065BDN onsemi
Description: DIODE ARRAY SIC 650V 10A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote FFSH2065BDN nach Preis ab 3.26 EUR bis 7.06 EUR
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FFSH2065BDN | Hersteller : onsemi |
SiC Schottky Diodes 650V 20A SIC SBD GEN 1.5 |
auf Bestellung 147 Stücke: Lieferzeit 10-14 Tag (e) |
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