FFSH4065BDN-F085 onsemi
Hersteller: onsemi
Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 1+ | 20.06 EUR |
| 30+ | 12.17 EUR |
| 120+ | 10.44 EUR |
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Technische Details FFSH4065BDN-F085 onsemi
Description: DIODE SIL CARB 650V 20A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 866pF @ 1V, 100kHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Qualification: AEC-Q101.
Weitere Produktangebote FFSH4065BDN-F085 nach Preis ab 10.52 EUR bis 20.15 EUR
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FFSH4065BDN-F085 | Hersteller : onsemi |
SiC Schottky Diodes 650V |
auf Bestellung 675 Stücke: Lieferzeit 10-14 Tag (e) |
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| FFSH4065BDN-F085 | Hersteller : ON Semiconductor |
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auf Bestellung 282 Stücke: Lieferzeit 21-28 Tag (e) |