FFSM2065B onsemi
Hersteller: onsemi
Description: DIODE SIL CARB 650V 23.4A 4PQFN
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 4-PQFN (8x8)
Current - Average Rectified (Io): 23.4A
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
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Technische Details FFSM2065B onsemi
Description: DIODE SIL CARB 650V 23.4A 4PQFN, Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: 4-PQFN (8x8), Current - Average Rectified (Io): 23.4A, Capacitance @ Vr, F: 866pF @ 1V, 100kHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote FFSM2065B nach Preis ab 4.81 EUR bis 12.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FFSM2065B | onsemi |
Description: DIODE SIL CARB 650V 23.4A 4PQFN Current - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 4-PQFN (8x8) Current - Average Rectified (Io): 23.4A Capacitance @ Vr, F: 866pF @ 1V, 100kHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Cut Tape (CT) |
auf Bestellung 7910 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSM2065B | onsemi |
SiC Schottky Diodes SIC SBD GEN1.5 650V 20A PQFM88 |
auf Bestellung 3060 Stücke: Lieferzeit 10-14 Tag (e) |
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| FFSM2065B | ONN |
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auf Bestellung 1720 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FFSM2065B |
|
Hersteller: onsemi
Description: DIODE SIL CARB 650V 23.4A 4PQFN
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 4-PQFN (8x8)
Current - Average Rectified (Io): 23.4A
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
Description: DIODE SIL CARB 650V 23.4A 4PQFN
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 4-PQFN (8x8)
Current - Average Rectified (Io): 23.4A
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
auf Bestellung 7910 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.13 EUR |
| 10+ | 7.95 EUR |
| 100+ | 5.75 EUR |
| 500+ | 4.93 EUR |
| 1000+ | 4.81 EUR |
| FFSM2065B |
|
Hersteller: onsemi
SiC Schottky Diodes SIC SBD GEN1.5 650V 20A PQFM88
SiC Schottky Diodes SIC SBD GEN1.5 650V 20A PQFM88
auf Bestellung 3060 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.23 EUR |
| 10+ | 7.72 EUR |
| 100+ | 5.95 EUR |
| 500+ | 5.49 EUR |
| 1000+ | 5.15 EUR |
| FFSM2065B |
|
Hersteller: ONN
auf Bestellung 1720 Stücke:
Lieferzeit 21-28 Tag (e)