| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.75 EUR |
| 10+ | 6.85 EUR |
| 100+ | 6.31 EUR |
| 500+ | 5.97 EUR |
Produktrezensionen
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Technische Details FFSP08120A onsemi / Fairchild
Description: DIODE SIL CARB 1200V 8A TO220L, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 538pF @ 1V, 100kHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote FFSP08120A nach Preis ab 5.62 EUR bis 13.66 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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FFSP08120A | onsemi |
 Description: DIODE SIL CARB 1200V 8A TO220LPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 538pF @ 1V, 100kHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSP08120A | onsemi |
SiC Schottky Diodes 1200V SiC SBD 8A |
auf Bestellung 545 Stücke: Lieferzeit 10-14 Tag (e) |
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| FFSP08120A | ON Semiconductor |
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auf Bestellung 750 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FFSP08120A |
|
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 8A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 538pF @ 1V, 100kHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1200V 8A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 538pF @ 1V, 100kHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.59 EUR |
| 50+ | 7.29 EUR |
| 100+ | 6.69 EUR |
| 500+ | 5.62 EUR |
| FFSP08120A |
|
Hersteller: onsemi
SiC Schottky Diodes 1200V SiC SBD 8A
SiC Schottky Diodes 1200V SiC SBD 8A
auf Bestellung 545 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.66 EUR |
| 10+ | 7.33 EUR |
| 100+ | 6.7 EUR |
| 500+ | 6.01 EUR |
| FFSP08120A |
|
Hersteller: ON Semiconductor
auf Bestellung 750 Stücke:
Lieferzeit 21-28 Tag (e)