| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.57 EUR |
| 10+ | 15.49 EUR |
| 100+ | 11.77 EUR |
| 500+ | 11.52 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FFSP20120A onsemi
Description: DIODE SIL CARB 1200V 20A TO220L, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1220pF @ 1V, 100KHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote FFSP20120A nach Preis ab 12.01 EUR bis 23.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FFSP20120A | onsemi |
 Description: DIODE SIL CARB 1200V 20A TO220LPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1220pF @ 1V, 100KHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
auf Bestellung 432 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
| FFSP20120A | ON Semiconductor |
|
auf Bestellung 580 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FFSP20120A |
|
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 20A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1200V 20A TO220L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 432 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.01 EUR |
| 10+ | 15.98 EUR |
| 100+ | 12.01 EUR |
| FFSP20120A |
|
Hersteller: ON Semiconductor
auf Bestellung 580 Stücke:
Lieferzeit 21-28 Tag (e)