FFSPF0865A onsemi
Hersteller: onsemiDescription: DIODE SIL CARB 650V 8A TO220F2FS
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 463pF @ 1V, 100kHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 915 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.96 EUR |
| 10+ | 5.28 EUR |
| 100+ | 3.75 EUR |
| 500+ | 3.11 EUR |
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Technische Details FFSPF0865A onsemi
Description: DIODE SIL CARB 650V 8A TO220F2FS, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 463pF @ 1V, 100kHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220F-2FS, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A, Current - Reverse Leakage @ Vr: 200 µA @ 650 V.
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