Technische Details FGA30N65SMD onsemi / Fairchild
Description: IGBT FIELD STOP 650V 60A TO-3PN, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 35 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A, Supplier Device Package: TO-3PN, IGBT Type: Field Stop, Td (on/off) @ 25°C: 14ns/102ns, Switching Energy: 716µJ (on), 208µJ (off), Test Condition: 400V, 30A, 6Ohm, 15V, Gate Charge: 87 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 300 W.
Weitere Produktangebote FGA30N65SMD nach Preis ab 4.31 EUR bis 4.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| FGA30N65SMD | Fairchild Semiconductor |
 Description: IGBT FIELD STOP 650V 60A TO-3PNPackaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-3PN IGBT Type: Field Stop Td (on/off) @ 25°C: 14ns/102ns Switching Energy: 716µJ (on), 208µJ (off) Test Condition: 400V, 30A, 6Ohm, 15V Gate Charge: 87 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 300 W |
auf Bestellung 8402 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGA30N65SMD | ON Semiconductor |
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auf Bestellung 780 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FGA30N65SMD |
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Hersteller: Fairchild Semiconductor
Description: IGBT FIELD STOP 650V 60A TO-3PN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Field Stop
Td (on/off) @ 25°C: 14ns/102ns
Switching Energy: 716µJ (on), 208µJ (off)
Test Condition: 400V, 30A, 6Ohm, 15V
Gate Charge: 87 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 300 W
Description: IGBT FIELD STOP 650V 60A TO-3PN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Field Stop
Td (on/off) @ 25°C: 14ns/102ns
Switching Energy: 716µJ (on), 208µJ (off)
Test Condition: 400V, 30A, 6Ohm, 15V
Gate Charge: 87 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 300 W
auf Bestellung 8402 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 126+ | 4.31 EUR |
| FGA30N65SMD |
|
Hersteller: ON Semiconductor
auf Bestellung 780 Stücke:
Lieferzeit 21-28 Tag (e)